Mitsubishi QM200DY-H IGBT Module

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Mitsubishi QM200DY-H IGBT Module

Posted Date: 2023-07-21
Mitsubishi QM200DY-H IGBT Module

Energy Transistor Module for Medium Energy Switching Use
VCES Collector-Emitter Voltage: 600V (volts)
±IC Collector Present: 200A (amperes)
±ICP Collector Present (Peak): 400A (amperes)
PC Collector Dissipation: 1050W (watts)
Tj Junction Temperature: -40 ~ +150°C (levels Celsius)
VR(DC) FWDi Rated DC Reverse Voltage: 600V (volts)
IF FWDi Ahead Present: 2000A (amperes)
Mounting Torque Fundamental Terminal Screw M6: 20~30
Mounting Torque Mounting Screw M6: 1.96~2.94 N.m
The QM200DY-H energy transistor module is appropriate to be used in numerous industrial purposes, together with however not restricted to:
Servo Drives:
DC Motor Controllers
NC Gear: Numerical Management tools used for automated management in manufacturing processes.
Welders: Units used for welding operations.
Software: Excessive-power and high-frequency purposes, generally utilized in motor drives, energy inverters, UPS methods, and different industrial energy electronics purposes.
The Mitsubishi QM200DY-H Twin IGBT module to function at excessive frequencies, making it appropriate to be used in purposes that require excessive energy and excessive effectivity.
Its configuration with two IGBTs in a single package deal permits for straightforward set up and reduces the necessity for exterior parts.
This module comparable to motor drives, AC/DC servo drives, uninterruptible energy provides (UPS), and different purposes the place environment friendly energy management and excessive switching frequencies are important.