New 800V N-channel depletion mode MOSFET supplied in modified SOT-223-2L package
New 800V N-channel depletion mode MOSFET supplied in modified SOT-223-2L package
Littelfuse, Inc. has launched the CPC3981Z, an 800V, 100mA, 45Ohm, Small Energy N-Channel Depletion Mode MOSFET.
In comparison with a typical SOT-223 bundle, this new product’s SOT-223-2L bundle contains a eliminated center pin. That raises the drain-gate pin spacing from 1.386mm to greater than 4mm. The prolonged creepage distance is advantageous in increased voltage functions equivalent to SMPS or PFC startup circuits as a result of designers can keep away from expensive conformal coating or potting.
The important thing differentiator of the machine is its modified SOT-223-2L bundle, which permits designers to fulfill the required prolonged creepage distance for increased voltage functions with a small discrete machine. With its bigger creepage distance, the machine will increase circuit robustness and facilitates price financial savings. The 800V blocking voltage ranking of the machine makes it a superb alternative for industrial, power, telecommunications and LED lighting functions, together with usually ON switches, energy provides, startup circuits, solid-state relays, present regulators, and fixed present sources.
The elevated distance between the depletion mode MOSFET pins streamlines the isolation administration of broad enter voltage energy provides and permits compact PCB layouts.
“Littelfuse is proud to supply one of many broadest portfolios of depletion-mode MOSFETs within the trade, and the CPC3981Z additional strengthens our place,” stated Mark P. Smith, director of Product Administration, Built-in Circuits and MCU at Littelfuse. “This new addition to our low-cost depletion mode MOSFET household, with its new SOT-223-2L bundle, is a wonderful resolution for functions that require broad enter voltage ranges as much as 800V.”
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- New 800V N-channel depletion mode MOSFET supplied in modified SOT-223-2L package