Energy semiconductor chilly data: energy density of energy units

“The event route of chip know-how is to scale back conduction loss and dynamic loss. The event route of packaging reduces the parasitic inductance, permitting the chip to change shortly with out oscillation; enhance the reliability of the packaging course of, enhance the ability cycle and temperature cycle, that's to say, whereas rising the junction temperature of the system, it should additionally make sure the lifetime of the system. Enhance warmth dissipation and scale back junction-to-case thermal resistance Rthjc.

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Ziying Chen, Infineon Industrial semiconductor

Energy semiconductors are destined to face up to massive energy losses, excessive temperatures and temperature adjustments. Enhancing the ability density of units and techniques is a crucial design purpose of energy semiconductors. We pursue the output present functionality per unit chip space all the best way, and the belief technique is as follows:

1. Cut back conduction loss and dynamic loss
2. Cut back parasitic inductance and provides full play to the switching velocity of the chip
3. Improve the utmost allowable working junction temperature
4. Cut back junction-to-case thermal resistance Rthjc

The event route of chip know-how is to scale back conduction loss and dynamic loss. The event route of packaging reduces the parasitic inductance, permitting the chip to change shortly with out oscillation; enhance the reliability of the packaging course of, enhance the ability cycle and temperature cycle, that's to say, whereas rising the junction temperature of the system, it should additionally make sure the lifetime of the system. Enhance warmth dissipation and scale back junction-to-case thermal resistance Rthjc.

It may be seen within the formulation that technological progress has elevated Tvj and decreased Rthjc, which permits the system to face up to higher losses Vce*IC, which signifies that the warmth on the chip is allowed to be bigger.

Let’s make an attention-grabbing comparability with the Solar’s particular energy density.

Infineon’s look is the star product:

EconoDUAL™3, FF900R12ME7_B11,
900A 1200V IGBT7.
Energy Density of FF900R12ME7_B11

The primary working situation:

Remedy the ability density of the FF900R12ME7_B11 IGBT module at a case temperature of 80 levels. Remodel the above formulation:

The allowable energy consumption of a 900A 1200V chip is 1549 watts when the case temperature is 80 levels. If the dynamic switching loss will not be thought of within the case of DC, Ptot=Vcesat*Ic, because the typical worth of the saturation voltage drop is 1.7V, right now Machine collector present (with out switching losses) is round 911A.

For the reason that chip space of ​​900A IGBT is about 6cm², the ability density is: 2.6*10⁶W/m². Presently, the chip energy density of IGBT7 is one order of magnitude larger than that of a match flame, and 9 orders of magnitude larger than that of an electrical iron! ! !

The second working situation is brief circuit:

The IGBT is linked to the 900V DC bus, and the primary kind of short-circuit experiment is carried out. The bus voltage is 900V throughout short-circuit, and inside 8us, the short-circuit present can attain greater than 3200A, and the instantaneous energy is as excessive as P=900V*3200A=2.88MW!!!

In the identical manner, it's calculated that the ability density of the chip is as excessive as 4.8*10⁹ W/m², which is 2 orders of magnitude larger than the ability density of the photo voltaic floor of 5.0*10⁷W/m²! ! !

Be aware:

1. The mass of a match is about 0.065g, and the calorific worth of wooden is about 1.2×107J/kg. Assuming that the cross-sectional space of ​​the flame is 100mm2, the match will burn out in 15 seconds.

2. The median worth of human physique train fever is 200W, and the floor space of ​​the human physique is predicated on Xu Wensheng’s formulation: physique floor space (m2) = 0.0061 × peak (cm) + 0.0128 × weight (kg) – 0.1529

IGBT temperature

Within the system design, the working junction temperature of the IGBT is mostly 100°C larger than the boiling level of water, the design goal is 150°C, and the transient is as excessive as 175°C.Within the cooling water pump of the hydrogen gasoline cell, the cooling liquid temperature of the IGBT within the driver could also be 95 levels. Below such harsh working situations, the driving kilometers and repair lifetime of the automobile should be met, and the reliability and repair lifetime of the IGBT are extremely required.

The problem of excessive energy density

Because of the very excessive necessities on the working temperature and energy density of energy semiconductors within the design of energy Electronic techniques, it's a nice problem for the design and manufacturing of chip know-how and packaging know-how.

Solder layer

Excessive temperature and huge case temperature change will trigger the mechanical fatigue of the module solder layer to separate, which is able to enhance the thermal resistance Rthjc from the junction to the case, after which fail.

binding wire

Solely after the comparability can we all know that the ability density of the IGBT chip is so excessive, now let’s research the design specification and present density of the bonding wire.

There's a much less noticeable parameter within the module’s knowledge sheet, the module lead resistance, that's, the resistance worth RCC’+EE’ from the terminal to the chip, this resistance worth doesn't appear to be an excessive amount of loss for small present modules, however this The present density of the bonding wire is as excessive as 254A/mm², which is way larger than the present density of 6A/mm² of the copper wire within the family energy distribution specification. If the lead wire of the 900A module is designed in line with the aluminum wire present density of two.5A/mm, the lead wire of the 900A module must be 360mm², which shall be an aluminum row with a cross-section of 60*60mm.

The repeated stream of such a high-density present by way of the bonding wire will trigger mechanical stress on the bonding wire, leading to mechanical injury similar to cracking of the bonding wire.

One finish of the bonding wire is linked to the metallization layer of the IGBT chip, which is a 3.2um thick AlSiCu materials. This connection level can also be a weak hyperlink that's vulnerable to mechanical fatigue. Massive junction temperature adjustments will trigger one other failure mechanism. Alignment is off.

Datasheet for the IGC193T120T8RM 200A 1200V chip

Packaging effectivity

The lead resistance of the module, that's, the resistance worth RCC’+EE’ from the terminal to the chip, will trigger the loss, which isn't a small worth for medium and excessive energy modules.

EconoDUAL™3 FF900R12ME7 module lead resistance, the resistance worth from terminal to chip is 0.8mΩ, the voltage drop is 0.72V at 900A, and the ability consumption is as excessive as 648W.

FF900R12ME7 Present and Lead Loss

If the PrimePACK™ bundle is chosen, its most specification is 2400A half bridge, and the lead resistance of such a module is way decrease, as a result of the terminal adopts a copper bar construction. FF900R12IE4, the resistance worth from the 900A 1200V module terminal to the chip is 0.3mΩ, the voltage drop at 900A is 0.27V, and the ability consumption is simply 243W, which is simply 38% of the EconoDUAL™3 FF900R12ME7.

Due to this fact, when selecting a tool, it's essential to contemplate the traits of various packages to fulfill the system necessities.

in conclusion:

From this perspective, the primary drawback introduced by excessive energy density is the mechanical fatigue of the system, which impacts the lifetime of the system. Fortuitously, these life mechanisms are recognized and might be described by energy cycles and temperature cycles. The lifetime of the system and system might be designed.

As a way to consider the lifetime of the system within the system within the utility fields of wind energy era, electrical automobile and locomotive traction, and many others. with massive load adjustments, it's essential to additional perceive the life mechanism and design technique of the system. Infineon gives a fee-based service for all times simulation.