Semikron SEMIX303GB12E4S IGBT Module

The Semikron SEMIX303GB12E4S is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Semikron. It affords the next options and specs:

Options:

• Homogeneous Silicon (Honogengous SI)
• Trenchgate expertise
• Optimistic temperature coefficient for Vce(sat)
• Excessive quick circuit functionality

Typical Purposes:

• AC inverter drives
• Uninterruptible Energy Provides (UPS)
• Digital Welding

Remarks:

• Case temperature is restricted to a most of Tc=125°C.
• Product reliability outcomes are legitimate for a junction temperature of Tj+150°C.

Most Rankings and Traits:

• Collector-Emitter voltage (Vces): 1200V
• Gate-Emitter voltage (VGES): ±20V
• Collector Present (IC): 300A
• Collector Present – Pulsed (Icp): 600A
• Collector Energy Dissipation (Laptop): 1270W
• Collector-Emitter Voltage (VCES): 4000V
• Working Junction Temperature (Tj): -40 to +175°C
• Storage Temperature (Tstg): -40 to +125°C
• Weight: 300g

Please word that these specs are supplied primarily based on typical values and needs to be verified with the datasheet or official documentation from Semikron for essentially the most correct and detailed details about the SEMIX303GB12E4S IGBT module.