Semikron SEMiX353GB126V1 IGBT Module

The Semikron SEMiX353GB126V1 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Semikron. Listed here are the options and specs of the module:

Options:

• Homogeneous Si
• Trench = Trenchgate expertise
• VCE(sat) with constructive temperature coefficient
• Excessive quick circuit functionality
• Press-fit pins as auxiliary contacts
• Thermally optimized ceramic

Typical Purposes:

• AC inverter drives
• UPS (Uninterruptible Energy Provide)
• Renewable power methods

Remarks:

• Product reliability outcomes are legitimate for Tj=150°C (Junction Temperature)
• Visol (Isolation voltage) between temperature sensor and energy part is simply 2500V
• For storage and case temperature with TIM (Thermal Interface Materials), discuss with doc “TP(*) SEMiX 3p”

Most Rankings and Traits:

• Absolute most scores (Tc=25°C until specified in any other case)
  • Collector-Emitter voltage Vces: 1200V
  • Gate-Emitter voltage VGES: ±20V
  • Collector present IC: 500A
  • Collector present Icp: 1000A
  • Collector energy dissipation Computer: 3900W
  • Collector-Emitter voltage VCES: 4000V
  • Working junction temperature Tj: +150°C
  • Storage temperature Tstg: -40 to +125°C
• Mounting screw torque: 3.5 *1 N·m (Newton meter)

Weight: 350g

These specs present details about the module’s voltage, present, energy dissipation, temperature scores, mounting screw torque, weight, and different related particulars.