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Semikron SEMIX603GB12E4P IGBT Module

Semikron SEMIX603GB12E4P IGBT Module

Posted Date: 2023-08-17
Semikron SEMIX603GB12E4P IGBT Module
Semikron SEMIX603GB12E4P IGBT Module
Semikron SEMIX603GB12E4P IGBT Module
Semikron SEMIX603GB12E4P IGBT Module
Semikron SEMIX603GB12E4P IGBT Module

The Semikron SEMIX603GB12E4P is a high-power semiconductor module designed for demanding functions corresponding to motor drives, inverters, and energy provides. Right here is an outline of its key options, specs, and typical functions:

Description: The SEMIX603GB12E4P module is an influence semiconductor module that features six IGBTs (Insulated Gate Bipolar Transistors) and 6 diodes, organized in a three-phase bridge configuration. This module is designed to deal with excessive energy ranges and is well-suited for functions the place exact management {of electrical} energy is essential.


  • Honogengous SI: Makes use of Honogengous SI expertise, indicating superior design and manufacturing strategies.
  • Trenchgate Expertise: Incorporates trenchgate expertise for improved efficiency and effectivity.
  • Vce(sat) with Optimistic Temperature Coefficient: The Vce(sat) parameter reveals a constructive temperature coefficient, contributing to secure efficiency over various temperatures.
  • Excessive Brief Circuit Functionality: Designed to deal with excessive short-circuit currents, enhancing robustness and reliability.

Typical Purposes:

  • AC Inverter Drives: Appropriate for AC motor drives, permitting environment friendly and exact management of motor pace and route.
  • Uninterruptible Energy Provides (UPS): Utilized in UPS programs to make sure uninterrupted energy supply throughout outages.
  • Digital Welding: Utilized in digital welding gear to handle energy ranges and guarantee exact management throughout welding processes.


  • Case Temperature Restricted: The utmost case temperature is restricted to 125°C.
  • Product Reliability: Product reliability outcomes are legitimate for a junction temperature (Tj) of as much as +150°C.

Most Rankings and Traits (Tc=25°C until specified):

  • Collector-Emitter Voltage (Vces): 1200V
  • Gate-Emitter Voltage (VGES): ±20V
  • Collector Present (IC): 600A
  • Peak Collector Present (Icp): 1200A
  • Collector Energy Dissipation (Computer): 1270W
  • Collector-Emitter Voltage (VCES): 4000V
  • Working Junction Temperature (Tj): -40 to +175°C
  • Storage Temperature (Tstg): -40 to +125°C

Weight: 300g

The Semikron SEMIX603GB12E4P module’s superior expertise, excessive present and voltage scores, and strong design make it appropriate for numerous energy electronics functions. Its incorporation of IGBTs and diodes in a three-phase bridge configuration permits for environment friendly and managed energy administration. With its excessive short-circuit functionality, temperature administration options, and distinctive efficiency traits, this module serves as a dependable answer for demanding functions that require exact energy management and administration.