Semikron SEMIX603GB12E4P IGBT Module

The Semikron SEMIX603GB12E4P is a high-power semiconductor module designed for demanding functions corresponding to motor drives, inverters, and energy provides. Right here is an outline of its key options, specs, and typical functions:

Description: The SEMIX603GB12E4P module is an influence semiconductor module that features six IGBTs (Insulated Gate Bipolar Transistors) and 6 diodes, organized in a three-phase bridge configuration. This module is designed to deal with excessive energy ranges and is well-suited for functions the place exact management {of electrical} energy is essential.

Options:

• Honogengous SI: Makes use of Honogengous SI expertise, indicating superior design and manufacturing strategies.
• Trenchgate Expertise: Incorporates trenchgate expertise for improved efficiency and effectivity.
• Vce(sat) with Optimistic Temperature Coefficient: The Vce(sat) parameter reveals a constructive temperature coefficient, contributing to secure efficiency over various temperatures.
• Excessive Brief Circuit Functionality: Designed to deal with excessive short-circuit currents, enhancing robustness and reliability.

Typical Purposes:

• AC Inverter Drives: Appropriate for AC motor drives, permitting environment friendly and exact management of motor pace and route.
• Uninterruptible Energy Provides (UPS): Utilized in UPS programs to make sure uninterrupted energy supply throughout outages.
• Digital Welding: Utilized in digital welding gear to handle energy ranges and guarantee exact management throughout welding processes.

Remarks:

• Case Temperature Restricted: The utmost case temperature is restricted to 125°C.
• Product Reliability: Product reliability outcomes are legitimate for a junction temperature (Tj) of as much as +150°C.

Most Rankings and Traits (Tc=25°C until specified):

• Collector-Emitter Voltage (Vces): 1200V
• Gate-Emitter Voltage (VGES): ±20V
• Collector Present (IC): 600A
• Peak Collector Present (Icp): 1200A
• Collector Energy Dissipation (Computer): 1270W
• Collector-Emitter Voltage (VCES): 4000V
• Working Junction Temperature (Tj): -40 to +175°C
• Storage Temperature (Tstg): -40 to +125°C

Weight: 300g

The Semikron SEMIX603GB12E4P module’s superior expertise, excessive present and voltage scores, and strong design make it appropriate for numerous energy electronics functions. Its incorporation of IGBTs and diodes in a three-phase bridge configuration permits for environment friendly and managed energy administration. With its excessive short-circuit functionality, temperature administration options, and distinctive efficiency traits, this module serves as a dependable answer for demanding functions that require exact energy management and administration.