SEMIKRON SEMIX653GB176D IGBT Module

The SEMIKRON SEMIX653GB176D is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by SEMIKRON. It options a number of traits and is appropriate for varied purposes. Listed below are the main points:

Options:

• Honogengous SI: Refers to the usage of silicon because the Semiconductor materials.
• Trenchgate expertise: This expertise includes the usage of a trench construction to boost the efficiency of the IGBT.
• Vce(sat) with optimistic temperature coefficient: The saturation voltage (Vce(sat)) will increase with temperature, which helps in reaching higher stability.
• Excessive brief circuit functionality: The module is designed to face up to excessive short-circuit currents.

Typical Purposes:

• AC inverter drives: Utilized in variable frequency drives for AC motors.
• UPS (Uninterruptible Energy Provide): These modules may be utilized in UPS programs to make sure steady energy provide.
• Digital Welding: Appropriate for welding purposes that require excessive present capabilities.

Remarks:

• Case temperature restricted Tc=125°C max: The utmost allowable case temperature is 125°C to make sure correct operation and reliability.
• Product reliability outcomes are legitimate for Tj+150°C: The required reliability outcomes are relevant when the junction temperature (Tj) is stored inside 150°C.

Most Rankings and Traits:

• Collector-Emitter voltage Vces: 1700V (The utmost voltage that may be utilized between the collector and emitter terminals)
• Gate-Emitter voltage VGES: ±20V (The utmost voltage that may be utilized between the gate and emitter terminals)
• Collector present IC: 450A (The utmost steady collector present)
• Collector present Icp: 900A (The utmost pulsed collector present)
• Collector energy dissipation Computer: 1270W (The utmost energy dissipation that the module can deal with)
• Collector-Emitter voltage VCES: 4000V (The utmost voltage that may be utilized between the collector and emitter terminals in off-state)
• Working junction temperature Tj: -40 to +175°C (The temperature vary inside which the module can function safely)
• Storage temperature Tstg: -40 to +125°C (The temperature vary for storing the module)
• Weight: 300g (The burden of the module)