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SEMIKRON SEMIX653GB176D IGBT Module

SEMIKRON SEMIX653GB176D IGBT Module

Posted Date: 2023-06-15
SEMIKRON SEMIX653GB176D IGBT Module
SEMIKRON SEMIX653GB176D IGBT Module
SEMIKRON SEMIX653GB176D IGBT Module
SEMIKRON SEMIX653GB176D IGBT Module

The SEMIKRON SEMIX653GB176D is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by SEMIKRON. It options a number of traits and is appropriate for varied purposes. Listed here are the small print:

Options:

  • Honogengous SI: Refers to the usage of silicon because the Semiconductor materials.
  • Trenchgate expertise: This expertise entails the usage of a trench construction to boost the efficiency of the IGBT.
  • Vce(sat) with optimistic temperature coefficient: The saturation voltage (Vce(sat)) will increase with temperature, which helps in reaching higher stability.
  • Excessive brief circuit functionality: The module is designed to face up to excessive short-circuit currents.

Typical Functions:

  • AC inverter drives: Utilized in variable frequency drives for AC motors.
  • UPS (Uninterruptible Energy Provide): These modules may be utilized in UPS methods to make sure steady energy provide.
  • Digital Welding: Appropriate for welding purposes that require excessive present capabilities.

Remarks:

  • Case temperature restricted Tc=125°C max: The utmost allowable case temperature is 125°C to make sure correct operation and reliability.
  • Product reliability outcomes are legitimate for Tj+150°C: The desired reliability outcomes are relevant when the junction temperature (Tj) is saved inside 150°C.

Most Rankings and Traits:

  • Collector-Emitter voltage Vces: 1700V (The utmost voltage that may be utilized between the collector and emitter terminals)
  • Gate-Emitter voltage VGES: ±20V (The utmost voltage that may be utilized between the gate and emitter terminals)
  • Collector present IC: 450A (The utmost steady collector present)
  • Collector present Icp: 900A (The utmost pulsed collector present)
  • Collector energy dissipation Laptop: 1270W (The utmost energy dissipation that the module can deal with)
  • Collector-Emitter voltage VCES: 4000V (The utmost voltage that may be utilized between the collector and emitter terminals in off-state)
  • Working junction temperature Tj: -40 to +175°C (The temperature vary inside which the module can function safely)
  • Storage temperature Tstg: -40 to +125°C (The temperature vary for storing the module)
  • Weight: 300g (The burden of the module)