SEMIKRON SEMIX653GB176D IGBT Module
SEMIKRON SEMIX653GB176D IGBT Module
Posted Date: 2023-06-15




The SEMIKRON SEMIX653GB176D is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by SEMIKRON. It options a number of traits and is appropriate for varied purposes. Listed here are the small print:
Options:
- Honogengous SI: Refers to the usage of silicon because the Semiconductor materials.
- Trenchgate expertise: This expertise entails the usage of a trench construction to boost the efficiency of the IGBT.
- Vce(sat) with optimistic temperature coefficient: The saturation voltage (Vce(sat)) will increase with temperature, which helps in reaching higher stability.
- Excessive brief circuit functionality: The module is designed to face up to excessive short-circuit currents.
Typical Functions:
- AC inverter drives: Utilized in variable frequency drives for AC motors.
- UPS (Uninterruptible Energy Provide): These modules may be utilized in UPS methods to make sure steady energy provide.
- Digital Welding: Appropriate for welding purposes that require excessive present capabilities.
Remarks:
- Case temperature restricted Tc=125°C max: The utmost allowable case temperature is 125°C to make sure correct operation and reliability.
- Product reliability outcomes are legitimate for Tj+150°C: The desired reliability outcomes are relevant when the junction temperature (Tj) is saved inside 150°C.
Most Rankings and Traits:
- Collector-Emitter voltage Vces: 1700V (The utmost voltage that may be utilized between the collector and emitter terminals)
- Gate-Emitter voltage VGES: ±20V (The utmost voltage that may be utilized between the gate and emitter terminals)
- Collector present IC: 450A (The utmost steady collector present)
- Collector present Icp: 900A (The utmost pulsed collector present)
- Collector energy dissipation Laptop: 1270W (The utmost energy dissipation that the module can deal with)
- Collector-Emitter voltage VCES: 4000V (The utmost voltage that may be utilized between the collector and emitter terminals in off-state)
- Working junction temperature Tj: -40 to +175°C (The temperature vary inside which the module can function safely)
- Storage temperature Tstg: -40 to +125°C (The temperature vary for storing the module)
- Weight: 300g (The burden of the module)
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