Semikron SKIIP23NAB126V1 IGBT Module

The SEMIKRON module 3-phase bridge rectifier, a brake chopper, and a 3-phase bridge inverter right into a single bundle. Under are a number of the key options and specs of the SKiiP 23NAB126V1 module:
Options:
Quick Trench Insulated Gate Bipolar Transistors (IGBTs)
Strong and tender freewheeling diodes in CAL expertise (CAL stands for “Conduction and Amplification in Lateral”)
Extremely dependable spring contacts for electrical connections
UL acknowledged file no. E63532
Typical Purposes:
Inverter as much as 16 kVA
Typical motor energy: 7.5 kW
Specs:
IGBT Traits:
VcEs: 1200 V (Collector-emitter voltage)
Ic: 41 A (Collector present) at Tc = 25°C (70°C)
CRM: 50 A (Most repetitive collector present)
VGEs: -20 V (Gate-emitter voltage)
Temperature vary:-40°C~+150°C
Diode (Inverter, Chopper) Traits:
IF: 30 A (Ahead present) at Tc = 25°C (70°C)
FRM: 50 A (Most repetitive ahead present)
Temperature vary:-40°C~+150°C
Diode (Rectifier) Traits:
VRRM: 1600 V (Repetitive reverse voltage)
Ip: 70°C (Peak reverse present)
FSM: 370 A (Surge non-repetitive ahead present) for 10 ms at sin 180°, Tc = 25°C
iPt: 680 A’s (Surge non-repetitive ahead present integral) for 10 ms at sin 180°, Tc = 25°C
Temperature vary:-40°C ~ +150°C
Module Traits:
uRMS: 40 A per energy terminal (20 A/spring) root imply sq. present
stg: -40°C to +125°C storage temperature
AC, 1 min.: 2500 V (Isolation voltage between terminals)