Semikron SKIIP83EC125T1 IGBT Module
Semikron SKIIP83EC125T1 IGBT Module



The SKIIP83EC125T1 IGBT module by Semikron has the next options and specs:
Options:
. Excessive energy density design
. Built-in IGBTs and freewheeling diodes
. Constructed-in gate drive circuitry
. Low inductance and low thermal resistance
. Excessive short-circuit functionality
. Sturdy and dependable development
. Designed for straightforward set up and upkeep
. Low VCE(sat): The module is designed with low saturation voltage to attenuate energy losses.
Functions:
Inverter for motor drive: The module can be utilized in motor drive purposes.
AC and DC servo drive amplifier: It's appropriate for AC and DC servo drive amplifiers.
Uninterruptible energy provide (UPS): The module can be utilized in UPS methods.
Most Rankings and Traits (Tc=25°C except in any other case specified):
Collector-Emitter voltage (Vces): 11250V
Gate-Emitter voltage (VGES): ±20V
Collector present (IC): 110A
Collector present (Icp): 220A
Collector energy dissipation (Computer): 1500W
Collector-Emitter voltage (VCES): 2500V
Working junction temperature (Tj): +150°C
Storage temperature (Tstg): -40 to +125°C
Mounting screw torque: 3.5 * 1 N·m
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