Semikron SKM100GAL123D IGBT Module

The Semikron SKM100GAL123D is an IGBT (Insulated Gate Bipolar Transistor) module designed for high-performance energy functions. Listed here are the important thing specs and particulars of the module:

Specs:

• Transistor Polarity: N Channel
• DC Collector Present: 100A
• Collector Emitter Saturation Voltage Vce(on): 1.2kV
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Fashion: Module
• Variety of Pins: 5 Pins
• Working Temperature Max: 150°C
• Working Temperature Min: -40°C
• Product Vary: Not specified
• SVHC: To Be Suggested

Description: The Semikron SKM100GAL123D IGBT Module is designed for high-power functions that require environment friendly and dependable switching capabilities. As an N Channel IGBT module, it's appropriate for a variety of energy electronics functions, together with motor drives, inverters, and energy provides.

Options:

• Excessive Present Dealing with: With a DC Collector Present score of 100A, the module is able to dealing with substantial present masses, making it appropriate for demanding functions.
• Excessive Voltage Functionality: The Collector Emitter Voltage V(br)ceo of 1.2kV signifies that the module can stand up to excessive voltage ranges, guaranteeing dependable operation underneath various circumstances.
• Low Saturation Voltage: The Collector Emitter Saturation Voltage Vce(on) of 1.2kV signifies low conduction losses throughout operation, contributing to larger effectivity.
• Module Design: Packaged in a module type issue, the module’s design simplifies set up and supplies a handy resolution for energy electronics integration.
• Working Temperature Vary: The module can function in a temperature vary from -40°C to 150°C, making it appropriate for each indoor and out of doors functions.
• N Channel Configuration: As an N Channel IGBT, the module’s efficiency is optimized for functions the place the present flows from collector to emitter when the gate sign is utilized.

The Semikron SKM100GAL123D IGBT Module’s mixture of excessive present and voltage capabilities, low saturation voltage, and broad working temperature vary makes it a flexible alternative for varied energy electronics functions, particularly these demanding excessive effectivity and reliability.