SEMIKRON SKM111AR IGBT Module

SEMIKRON SKM111AR IGBT Module

The SEMIKRON SKM111AR is a high-power semiconductor module that mixes an insulated gate bipolar transistor (IGBT) and a free-wheeling diode in a single swap module.

This module (SKM111AR) has a formidable present score of as much as 600A and a voltage score of 1200V, making it appropriate for high-frequency operation and purposes that require quick switching speeds.

The SKM111AR is designed with a low thermal resistance and options an environment friendly base plate that successfully dissipates warmth. Its low-inductive design reduces electromagnetic interference (EMI) and enhances system effectivity.

Options of SKM111AR:

• N Channel, enhancement mode
• Avalanche attribute
• Brief connections and built-in gate resistors to suppress inner oscillations even in essential purposes
• Remoted copper baseplate
• All electrical connections on prime for simple busbaring
• Giant clearances (10 mm) and creepage distances (20 mm)
• UL acknowledged

Typical Functions:

• Switched mode energy provides
• DC servo and robotic drives
• DC choppers
• UPS gear
• Not appropriate for linear amplification

Most Scores and Traits (Tc=25°C except specified in any other case):

• Collector-Emitter voltage Vces: 100V
• Gate-Emitter voltage VGES: ±20V
• Collector present Ic: 200A
• Collector present Icp: 400A
• Collector energy dissipation Computer: 180W
• Isolation Voltage VIsol (AC 1 minute): 2500V
• Working junction temperature Tj: +150°C
• Storage temperature Tstg: -40 to +125°C
• Mounting screw torque: 2.5 to three.5 *1 N·m
• Weight: 130g