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Semikron SKM200GB128D IGBT Module

Semikron SKM200GB128D IGBT Module

Posted Date: 2023-07-28
Semikron SKM200GB128D IGBT Module
Semikron SKM200GB128D IGBT Module
Semikron SKM200GB128D IGBT Module
Semikron SKM200GB128D IGBT Module
Semikron SKM200GB128D IGBT Module
Semikron SKM200GB128D IGBT Module

The Semikron SKM200GB128D is a sophisticated IGBT module, a high-performance energy transistor module able to dealing with 1200V and 220A. This module options Mushy-Punch-Via (SPT) expertise and homogeneous Si, guaranteeing wonderful brief circuit functionality that self-limits to six instances the collector present (6xIc). Its VCEsat (Collector-Emitter saturation voltage) displays a constructive temperature coefficient, making it an energy-efficient possibility.

The SKM200GB128D IGBT module is well-suited for numerous purposes corresponding to AC inverter drives, Uninterruptible Energy Provide (UPS) programs, and digital welders working at frequencies of as much as 20kHz.

Key Options:

  • Homogeneous Si
  • Mushy-Punch-Via expertise (SPT)
  • VCEsat with a constructive temperature coefficient
  • Excessive brief circuit functionality, self-limiting to 6xIc

Typical Purposes:

  • AC inverter drives
  • UPS programs
  • Digital welders with a frequency of as much as 20kHz

Most Scores and Traits:

(Absolute most rankings, Tc=25°C until in any other case specified)

  • Collector-Emitter voltage (Vces): 1200V
  • Gate-Emitter voltage (VGES): ±20V
  • Collector present (Ic) at Tcase = 25 (80) °C: 220A
  • Collector present (ICRM) at Tcase = 25 (80) °C, tp = 1 ms: 440A
  • Collector-Emitter voltage (VCES): 2500V
  • Working junction temperature (Tj): +150°C
  • Storage temperature (Tstg): -40 to +125°C

The module requires a mounting screw torque of two.5~5 N·m for terminals (M5). With its excellent options and high-performance specs, the Semikron SKM200GB128D IGBT module is a superb alternative for demanding energy electronics purposes.