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SILING MDC100B-18 IGBT Module

SILING MDC100B-18 IGBT Module

Posted Date: 2023-06-21
SILING MDC100B-18 IGBT Module
SILING MDC100B-18 IGBT Module
SILING MDC100B-18 IGBT Module
SILING MDC100B-18 IGBT Module

SILING MDC100B-18 IGBT module. Primarily based on the knowledge, listed below are the important thing traits and most scores of the module:

  • Collector-Emitter voltage (Vces): 1800V
  • Gate-Emitter voltage (VGES): ±20V
  • Collector Present (IC): 100A
  • Collector Present (Icp): 200A
  • Collector Energy Dissipation (Computer): 3000W
  • Collector-Emitter Voltage (VCES): 2500V
  • Working Junction Temperature (Tj): +150°C
  • Storage Temperature (Tstg): -40 to +125°C
  • Mounting Screw Torque: 3.5 N·m
  • Weight: 180g