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ST STE07DE220 IGBT Module

ST STE07DE220 IGBT Module

Posted Date: 2023-08-18
ST STE07DE220 IGBT Module
ST STE07DE220 IGBT Module
ST STE07DE220 IGBT Module
ST STE07DE220 IGBT Module
ST STE07DE220 IGBT Module

The ST STE07DE220 is an IGBT (Insulated Gate Bipolar Transistor) module with particular options, purposes, and most rankings. Right here’s the data you offered:


  • Excessive Voltage / Excessive Present Cascode Configuration: The module employs a cascode configuration to deal with excessive voltage and excessive present.
  • Extremely Low Equal On Resistance: This attribute helps decrease energy losses throughout operation.
  • Very Quick-Change: The module is able to quick switching speeds, as much as 150 kHz.
  • Extremely Low CISS: CISS refers back to the enter capacitance, and having it at an ultra-low stage is useful for efficiency.
  • Low Dynamic VCS(ON): This refers back to the dynamic on-state voltage, which contributes to environment friendly switching.


  • Industrial Converters: The module is designed to be used in industrial converters.
  • Welding: It could actually additionally discover purposes in welding gear.

Description: The STE07DE220 is manufactured utilizing a hybrid construction, combining excessive voltage Bipolar and low voltage MOSFET applied sciences. This hybrid design goals to offer optimum efficiency in ESBT (Emitter-Switched Bipolar Transistor) topology. The module is particularly designed for industrial mains flyback converters and particular purposes.

Most Rankings and Traits:

  • Collector-Emitter Voltage (Vces): 2200V
  • Gate-Emitter Voltage (VGES): ±20V
  • Collector Present (Ic): 7A
  • Collector Present (Icp) for 1ms: 14A
  • Collector Energy Dissipation (Computer): 220W
  • Isolation Voltage (VIsol) for AC 1 minute: 2500V
  • Working Junction Temperature (Tj): +150°C
  • Storage Temperature (Tstg): -40 to +125°C
  • Mounting Screw Torque: 3.5 *1 N·m