Starpower GD200HFL120C2S IGBT Module

The Starpower GD200HFL120C2S IGBT Module is a high-performance energy semiconductor machine designed for environment friendly energy switching and management. Listed here are the important thing particulars and options of the GD200HFL120C2S IGBT Module:

Basic Description: The STARPOWER IGBT Energy Module is engineered to supply ultra-low conduction losses and excessive brief circuit ruggedness. It’s tailor-made for purposes akin to common inverters and uninterruptible energy provides (UPS).

Options:

• Low VCE(sat) SPT+ IGBT Expertise: Incorporates SPT+ IGBT expertise with low saturation voltage to attenuate conduction losses.
• Brief Circuit Functionality: Designed with a brief circuit functionality of 10μs, enhancing its resilience in opposition to short-circuit occasions.
• VCE(sat) with Constructive Temperature Coefficient: The VCE(sat) displays a constructive temperature coefficient, contributing to steady efficiency throughout totally different working circumstances.
• Low Inductance Case: Designed with a low inductance case to optimize switching efficiency and decrease electromagnetic interference.
• Quick & Gentle Reverse Restoration Anti-parallel FWD: Outfitted with quick and mushy reverse restoration anti-parallel freewheeling diode (FWD) for environment friendly switching.
• Remoted Copper Baseplate utilizing DBC Expertise: Makes use of DBC (Direct Bond Copper) expertise for an remoted copper baseplate, enhancing thermal efficiency and sturdiness.

Typical Functions:

• Inverter for Motor Drive: Appropriate for motor drive inverters, offering environment friendly management of motor pace and route.
• AC and DC Servo Drive Amplifier: Utilized in AC and DC servo drive amplifiers for exact movement management purposes.
• Uninterruptible Energy Provide (UPS): Appropriate for UPS programs, making certain dependable and steady energy supply throughout outages.

Most Rankings and Traits (Tc=25°C until specified):

• Collector-Emitter Voltage (Vces): 1200V
• Gate-Emitter Voltage (VGES): ±20V
• Collector Present (Ic): 200A
• Peak Collector Present (Icp): 400A
• Collector Energy Dissipation (Laptop): 1364W
• Collector-Emitter Voltage (VCES): 4000V
• Working Junction Temperature (Tj): +150°C
• Storage Temperature (Tstg): -40 to +125°C
• Mounting Torque (Energy Terminal Screw M6): 2.5 to five.0 N.m
• Mounting Screw (M6): 3.0 to five.0 N.m

Module Kind:

• Molding Kind Module: Designed as a 1200V/200A module with two IGBTs in a single bundle.