STARPOWER GD50PiL120C6S IGBT Module
STARPOWER GD50PiL120C6S IGBT Module
Posted Date: 2023-06-23
The STARPOWER GD50PiL120C6S is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by STARPOWER Semiconductor. Listed here are the specs of the module:
- Producer: STARPOWER Semiconductor
- Mannequin: GD50PiL120C6S
- IGBT Sort: Excessive Energy
- Most Collector Present (IC): 50A
- Collector-Emitter voltage (VCE): 1200V
- Configuration: Single IGBT
- Case Connection: Frequent Emitter
- Most Junction Temperature (Tj): +150°C
- Storage Temperature Vary: -40°C to +125°C
- Mounting Screw Torque: 3 N·m
- Package deal Sort: Energy Module
- Variety of Pins: 6
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