Mitsubishi QM200DY-H IGBT Module

Options:Energy Transistor Module for Medium Energy Switching UseVCES Collector-Emitter Voltage: 600V (volts)±IC Collector Present: 200A (amperes)±ICP Collector Present (Peak): 400A (amperes)PC Collector Dissipation: 1050W (watts)Tj Junction Temperature: -40 ~ +150°C (levels Celsius)VR(DC) FWDi Rated DC Reverse Voltage: 600V (volts)IF FWDi...

Mitsubishi QM200DY-H IGBT Module

Options:Energy Transistor Module for Medium Energy Switching UseVCES Collector-Emitter Voltage: 600V (volts)±IC Collector Present: 200A (amperes)±ICP Collector Present (Peak): 400A (amperes)PC Collector Dissipation: 1050W (watts)Tj Junction Temperature: -40 ~ +150°C (levels Celsius)VR(DC) FWDi Rated DC Reverse Voltage: 600V (volts)IF FWDi...