Power MOSFET series enables high power ratings and power density

Vishay Intertechnology, Inc. now provides a brand new fourth-generation 650V E Sequence energy MOSFET that provides excessive effectivity and energy density for industrial, telecom, and computing functions. In comparison with previous-generation gadgets, the Vishay Siliconix n-channel SiHP054N65E slashes on-resistance by...

Semikron SKM200GB128D IGBT Module

The Semikron SKM200GB128D is a sophisticated IGBT module, a high-performance energy transistor module able to dealing with 1200V and 220A. This module options Mushy-Punch-Via (SPT) expertise and homogeneous Si, guaranteeing wonderful brief circuit functionality that self-limits to six instances the...

Vishay’s 200 V ultrafast rectifier delivers high current ratings up to 5 A in DFN3820A package

July 5, 2023 /SemiMedia/ — Vishay Intertechnology, Inc. Lately launched 4 new collection of 200 V FRED Pt® ultrafast rectifiers within the low profile DFN3820A bundle with wettable flanks. Offering space-saving, excessive effectivity options for industrial, industrial, and automotive purposes, the 1 A...

Siling MDC110-16 IGBT Module

The Energy Diode Module MDC110-16 collection is designed for numerous rectifier circuits and is particularly supposed for rectification functions.Mannequin:MDC110-16Sort: Energy Diode ModuleConfiguration: Two diode chips related in collectionvoltage Score: 1600VPresent Score: 110ABundle Sort: ModuleMounting Base: Electrically remoted from parts for...

Ultrafast rectifiers deliver high current ratings in a DFN3820A package

Vishay Intertechnology, Inc gives 4 new collection of 200V FRED Pt ultrafast rectifiers within the low profile DFN3820A bundle with wettable flanks. Supplying space-saving, high-efficiency options for business, industrial, and automotive functions, the 1A VS-1EAH02xM3, 2A VS-2EAH02xM3, 3A VS-3EAH02xM3, and...

Semikron SKIIP83EC125T1 IGBT Module

The SKIIP83EC125T1 IGBT module by Semikron has the next options and specs:Options:. Excessive energy density design. Built-in IGBTs and freewheeling diodes. Constructed-in gate drive circuitry. Low inductance and low thermal resistance. Excessive short-circuit functionality. Sturdy and dependable development. Designed for...