Fuji 1MBi2400VD-170E IGBT Module

The Fuji 1MBi2400VD-170E is an IGBT (Insulated Gate Bipolar Transistor) module with the next options and specs: Options: Low VCE(sat): This means that the module has a low voltage drop (saturation voltage) throughout the collector-emitter terminals when it's within the...

Infineon FZ2400R12HP4 IGBT Module

The Infineon FZ2400R12HP4 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for demanding energy switching functions. Manufactured by Infineon Applied sciences, a number one semiconductor firm, this module provides superior options for environment friendly and dependable energy management....

Semikron MDT1200-18E IGBT Module

The Semikron MDT1200-18E is an IGBT module with a collector-emitter voltage of 1800V and a collector present of 1200A. It's a high-power module designed to be used in quite a lot of purposes, together with industrial drives, renewable vitality, and...

Fuji 1MBI800U4B-120 IGBT Module

The relevant class for the IGBT-module 1MBI800U4B-120 is “Energy Semiconductor Module” or “IGBT Module.”The important thing specs and storage/transportation notes for the module:Collector-Emitter Voltage (VCE): 1200VGate-Emitter Voltage (VGES): ±20V (at Tc = 25°C)Steady Collector Present (IC): 800A (at Tc =...

Fuji 1MBI800U4B-120 IGBT Module

The relevant class for the IGBT-module 1MBI800U4B-120 is “Energy Semiconductor Module” or “IGBT Module.”The important thing specs and storage/transportation notes for the module:Collector-Emitter Voltage (VCE): 1200VGate-Emitter Voltage (VGES): ±20V (at Tc = 25°C)Steady Collector Present (IC): 800A (at Tc =...

Infineon FZ1200R12KF5 IGBT Module

The supplied data describes {the electrical} specs and scores of a high-power IGBT (Insulated Gate Bipolar Transistor) module. Listed here are the important thing specs:Collector-Emitter voltage (Vces): 1200VGate-Emitter voltage (VGES): ±20VCollector Present (IC) Steady at Tc=25°C: 1200ACollector Present (Icp) 1ms...

SEMIKRON SKIIP 22NAB126V10 IGBT Module

The SKIIP 22NAB126V10 is an influence module that mixes a 3-phase bridge rectifier, brake chopper, and 3-phase bridge inverter. It's designed for purposes reminiscent of inverters and motors with energy scores as much as 10 kVA and typical motor energy...

FUJI 1MBI2400U4D-170 IGBT Module

FUJI 1MBI2400U4D-170 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module that provides wonderful switching capabilities and is appropriate for varied functions. Key Options: Excessive-Velocity Switching: The module is designed to realize quick switching occasions, permitting for environment friendly and...

ABB 5SLD 1200J450350 IGBT Module

The ABB 5SLD 1200J450350 IGBT module. That is the specification of SPT+ diode.Producer: ABB (ABB Group)Mannequin: 5SLD 1200J450350IGBT Module Sort: This refers to particular mannequin or variant of IGBT module produced by ABB. The precise specs and traits of this...

Infineon FZ1200R33KF2C IGBT Module

The Infineon FZ1200R33KF2C IGBT moduleProducer: Infineon Applied sciencesOptions:4th technology Excessive Energy IGBT know-howExcessive switching frequency functionalityLow saturation voltageLow loss and low noise operationRemoted gate drive for improved noise immunity and robustnessSafety options for over-current, short-circuit, and temperatureAppropriate for motor drives,...

Infineon FF1200R16KF4 IGBT Module

The Infineon FF1200R16KF4 is an IGBT (Insulated Gate Bipolar Transistor) module. Listed here are the specs for this module: Options: Excessive efficiency IGBT expertise Low saturation voltage Constructive temperature coefficient for simple paralleling Excessive short-circuit functionality Built-in temperature sensor Excessive...

Infineon FF1200R16KF4 IGBT Module

The Infineon FF1200R16KF4 is an IGBT (Insulated Gate Bipolar Transistor) module. Listed below are the specs for this module: Options: Excessive efficiency IGBT know-how Low saturation voltage Optimistic temperature coefficient for straightforward paralleling Excessive short-circuit functionality Built-in temperature sensor Excessive...