IXYS VUO50-08NO3 IGBT Module

The IXYS VUO50-08NO3 is an IGBT (Insulated Gate Bipolar Transistor) module with particular options and functions. Listed below are some key particulars about this module: Options: Packaging: The module is packaged with a DCB (Direct Copper Bonded) ceramic base plate....

Fuji 6MBP300KA060-01 IGBT Module

The Fuji 6MBP300KA060-01 is a high-power IGBT (Insulated Gate Bipolar Transistor) module designed for heavy-duty functions. Listed below are the specs and traits of this module: Most Scores and Traits (Tc=25°C until specified in any other case): Collector-Emitter Voltage (Vces):...

Fuji 6MBP150RA060-02 IGBT Module

The Fuji 6MBP150RA060-02 is an IGBT (Insulated Gate Bipolar Transistor) module with particular options and most rankings. Right here’s a breakdown of its key specs: Options: Temperature Safety: The module supplies temperature safety by immediately detecting the junction temperature of...

Toshiba MG15Q6ES1 IGBT Module

Toshiba MG15Q6ES1 IGBT Module Options: Collector-Emitter Voltage (Vces): 1200V That is the utmost voltage that may be utilized throughout the collector and emitter terminals of the IGBT. Gate-Emitter Voltage (VGES): ±20V The gate-emitter voltage specifies the voltage vary that may...

SANREX DKR200AB60 IGBT Module

The SANREX DKR200AB60 is a high-speed twin diode module designed for high-power switching functions. Listed here are the main points of this module: Options: Excessive-Velocity Diode: The diodes on this module have a quick restoration time (trr) of lower than...

SanRex DFA150BA80 IGBT Module

The SanRex DFA150BA80 is an IGBT module designed for rectification functions that require the prevention of rush present. It's particularly configured with six diodes linked in a 3-phase bridge configuration and a thyristor linked in collection with the DC line....

Semikron SKiip 83AC121SMT10 IGBT Module

The Semikron SKiip 83AC121SMT10 is an IGBT (Insulated Gate Bipolar Transistor) module designed to be used in 3-phase bridge inverter functions. Most Rankings and Traits: Collector-Emitter Voltage (Vces): 1200V Gate-Emitter Voltage (VGES): ±20V Collector Present (Ic): 85A Collector Present (Peak,...

Fuji 1MBi2400VD-170E IGBT Module

The Fuji 1MBi2400VD-170E is an IGBT (Insulated Gate Bipolar Transistor) module with the next options and specs: Options: Low VCE(sat): This means that the module has a low voltage drop (saturation voltage) throughout the collector-emitter terminals when it's within the...

Mitsubishi PM75CL1B060 IGBT Module

The Mitsubishi PM75CL1B060 is an IGBT (Insulated Gate Bipolar Transistor) module designed for inverter and drive purposes, with built-in safety and management options. Listed below are the important thing options and specs of this module: Inverter + Drive & Safety...

Techsem MTC400A/1800V IGBT Module

The Techsem MTC400A/1800V is an IGBT (Insulated Gate Bipolar Transistor) module designed for varied high-power purposes. Listed here are the important thing options and specs for this module: Options: Remoted Mounting Base: 2500V~ (The module has an remoted mounting base,...

FUJI 2MBI600VN-120-50 IGBT Module

The FUJI 2MBI600VN-120-50 is an IGBT (Insulated Gate Bipolar Transistor) module designed for high-power functions that require high-speed switching and voltage drive. Listed below are the specs and options of this IGBT module: Options: Excessive-Pace Switching: This IGBT module is...

Semikron SK35GD12T4 IGBT Module

The Semikron SK35GD12T4 is an influence module designed for high-power purposes, notably in motor drives, energy provides, and industrial gear. It options Trench4 IGBT know-how and CAL 4 know-how FWD (Quick Restoration Diode), which make it appropriate for environment friendly...