Sharp LQ104V1DG11 LCD Display

Sharp LQ104V1DG11 LCD Show Specs: Panel Model: Sharp Panel Mannequin: LQ104V1DG11 Panel Kind: a-Si TFT-LCD Panel Measurement: 10.4 inch Decision: 640(RGB)×480 (VGA) Show Mode: TN (Twisted Nematic), Usually White, Transmissive Energetic Space: 211.2×158.4 mm Define Dimensions: 265×195×11 mm Floor: Antiglare...

IXYS VUO50-08NO3 IGBT Module

The IXYS VUO50-08NO3 is an IGBT (Insulated Gate Bipolar Transistor) module with particular options and functions. Listed below are some key particulars about this module: Options: Packaging: The module is packaged with a DCB (Direct Copper Bonded) ceramic base plate....

What is the Gallium Nitride Semiconductor Device?

Introduction: Gallium Nitride, with the chemical components GaN, is an inorganic compound consisting of nitrogen and gallium. It stands out as a direct bandgap semiconductor and has gained prominence since 1990, notably within the area of light-emitting diodes (LEDs). GaN...

12bit 500MHz eight-channel scopes from Yokogawa for power electronics

“The DLM5000HD collection expands Yokogawa’s oscilloscope lineup with fashions that ship larger decision for extra correct waveform evaluation, and include options that enhance usability and allow simpler setup,” in response to the corporate.Why the high-resolution fashions? “There may be an...

Rugged, protected GaN opens up commercial possibilities for data centres, vehicles and PV

The selection of a TOLL reduces the scale in comparison with a QFN, defined Stephen Oliver, Navitas Semiconductor’s vp of company advertising and investor relations. “It runs cooler than a QFN and has fused pins for thermal functionality, with keys...

STMicroelectronics’ new IGBT brings better durability and efficiency

September 5, 2023 /SemiMedia/ — STMicroelectronics just lately launched a brand new sequence of IGBTs with improved breakdown voltage functionality to 1350V and a most working temperature of 175°C. The upper rankings guarantee better design margin, strong efficiency, and prolonged...

SANREX DKR200AB60 IGBT Module

The SANREX DKR200AB60 is a high-speed twin diode module designed for high-power switching functions. Listed here are the main points of this module: Options: Excessive-Velocity Diode: The diodes on this module have a quick restoration time (trr) of lower than...

Semikron SKiip 83AC121SMT10 IGBT Module

The Semikron SKiip 83AC121SMT10 is an IGBT (Insulated Gate Bipolar Transistor) module designed to be used in 3-phase bridge inverter functions. Most Rankings and Traits: Collector-Emitter Voltage (Vces): 1200V Gate-Emitter Voltage (VGES): ±20V Collector Present (Ic): 85A Collector Present (Peak,...

Fuji 1MBi2400VD-170E IGBT Module

The Fuji 1MBi2400VD-170E is an IGBT (Insulated Gate Bipolar Transistor) module with the next options and specs: Options: Low VCE(sat): This means that the module has a low voltage drop (saturation voltage) throughout the collector-emitter terminals when it's within the...

Mitsubishi PM75CL1B060 IGBT Module

The Mitsubishi PM75CL1B060 is an IGBT (Insulated Gate Bipolar Transistor) module designed for inverter and drive purposes, with built-in safety and management options. Listed below are the important thing options and specs of this module: Inverter + Drive & Safety...

Power MOSFET series enables high power ratings and power density

Vishay Intertechnology, Inc. now provides a brand new fourth-generation 650V E Sequence energy MOSFET that provides excessive effectivity and energy density for industrial, telecom, and computing functions. In comparison with previous-generation gadgets, the Vishay Siliconix n-channel SiHP054N65E slashes on-resistance by...

IGBT inverter circuit working principle

An IGBT inverter circuit is a circuit that converts direct present indicators to alternating present indicators. They're generally utilized in energy electronics gadgets reminiscent of AC motor drives, photo voltaic photovoltaic energy techniques, and motor drive gadgets. The design and...