Toshiba MG100J2YS1 IGBT Module
Toshiba MG100J2YS1 IGBT Module
Posted Date: 2023-06-15
The Toshiba MG100J2YS1 is an IGBT (Insulated Gate Bipolar Transistor) module. Listed here are some particulars about its specs:
- Description: MG100J2YS1 IGBT Clever Module; Transistor MODULE; 25A/1200V/2unit
- Weight: 0.45 lbs
Most Rankings and Traits:
- Absolute Most Rankings (Tc=25°C until in any other case specified)
- Collector-Emitter voltage Vces: 600V
- Gate-Emitter voltage VGES: ±20V
- Collector present IC: 100A
- Collector present Icp: 200A
- Collector energy dissipation Computer: 450W
- Collector-Emitter voltage VCES: 2500V
- Working junction temperature Tj: +150°C
- Storage temperature Tstg: -40 to +125°C
- Mounting screw torque: 3.3 * 1 N·m
- 2IGBT: 100A 600V
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