Toshiba MG150Q2YS40 IGBT Module

The Toshiba MG150Q2YS40 is an N-channel IGBT (Insulated Gate Bipolar Transistor) energy module designed for high-power switching and motor management functions in industrial settings. Right here’s a breakdown of the small print you’ve supplied:

MG150Q2YS40 Description:

The MG150Q2YS40 is an influence module manufactured by Toshiba, identified for producing high-quality energy modules for industrial functions. This module is designed to supply glorious efficiency by way of switching time, ahead voltage, reverse restoration time, and thermal resistance. It’s appropriate for varied varieties of equipment and tools utilized in industrial crops and factories, making certain excessive precision and secure energy provide for constant and dependable outcomes.

Goal Functions:

The MG150Q2YS40 is meant to be used in high-power switching and motor management functions. Its sturdy traits make it appropriate for controlling motors and different high-power masses.

Options:

• N Channel IGBT: This module makes use of N-channel IGBT expertise, which is usually used for high-power switching and motor management functions.

Most Scores (Ta = 25°C):

• Collector-Emitter Voltage (Vces): 1200V
• Gate-Emitter Voltage (VGES): ±20V
• Collector Present (Ic): 150A
• Collector Present Peak (Icp): 300A
• Collector Energy Dissipation (Laptop): 1100W
• Collector-Emitter Voltage (VCES): 2500V
• Working Junction Temperature (Tj): As much as +150°C
• Storage Temperature (Tstg): -40°C to +125°C
• Mounting Screw Torque: 3/3 N·m

Further Data:

• The “2IGBT: 150A1200V” seemingly refers to the truth that the module accommodates two IGBTs (Insulated Gate Bipolar Transistors) with a present score of 150A and a voltage score of 1200V.