Toshiba MG15Q6ES1 IGBT Module

Toshiba MG15Q6ES1 IGBT Module Options:

1. Collector-Emitter Voltage (Vces): 1200V
   • That is the utmost voltage that may be utilized throughout the collector and emitter terminals of the IGBT.
2. Gate-Emitter Voltage (VGES): ±20V
   • The gate-emitter voltage specifies the voltage vary that may be utilized to the gate relative to the emitter.
3. Collector Present (Ic): 15A
   • That is the utmost steady present that may move by means of the collector terminal of the IGBT.
4. Collector Present (Icp): 30A
   • That is the utmost peak (non-repetitive) collector present allowed.
5. Collector Energy Dissipation (Computer): 145W
   • That is the utmost energy that may be dissipated on the collector terminal of the IGBT with out exceeding its limits.
6. Collector-Emitter Voltage (VCES): 2500V
   • That is an absolute most score for the collector-emitter voltage. Whereas the machine is rated for 1200V, it could face up to as much as 2500V, nevertheless it’s not beneficial to function it at such excessive voltages.
7. Working Junction Temperature (Tj): +150°C
   • The utmost temperature at which the IGBT can function safely with out exceeding its limits.
8. Storage Temperature (Tstg): -40°C to +125°C
   • The temperature vary for protected storage of the IGBT when it’s not in operation.
9. Mounting Screw Torque: 6 N·m
   • The required torque for mounting screws when putting in the module.
10. Weight: 185g
    • The load of the IGBT module.