Toshiba MG200H1AL2 IGBT Module

The Toshiba MG200H1AL2 is a sturdy IGBT (Insulated Gate Bipolar Transistor) module designed for high-power switching purposes. Right here’s a concise overview of its key options and specs:

Description: The MG200H1AL2 is a transistor module with a present score of 200 Amps and a voltage score of 450 Volts. It weighs 210 grams (roughly 0.46 lbs), making it appropriate for purposes that require excessive energy and voltage dealing with.

Goal Purposes: The MG200H1AL2 module is well-suited for:

• Excessive Energy Switching Purposes
• Motor Management Purposes

Options:

• NPN Si Energy Transistor: Options NPN (Unfavourable-Constructive-Unfavourable) configuration and makes use of silicon (Si) expertise, making it appropriate for high-power purposes.

Most Scores and Traits (Tc=25°C until specified):

• Collector-Emitter Voltage (Vces): 600V
• Gate-Emitter Voltage (VGES): ±20V
• Collector Present (Ic): 200A
• Peak Collector Present (Icp): 400A
• Collector Energy Dissipation (Laptop): 800W
• Collector-Emitter Voltage (VCES): 2500V
• Working Junction Temperature (Tj): +150°C
• Storage Temperature (Tstg): -40 to +125°C
• Mounting Screw Torque: 2.0/3.5 *1 N·m

Module Kind:

• IGBT Module: Designed as an IGBT module with a present score of 200A and a voltage score of 450V.

The Toshiba MG200H1AL2 IGBT module provides excessive energy dealing with capabilities and is designed to face up to demanding purposes in energy electronics. Its voltage and present scores, together with its NPN Si energy transistor configuration, make it appropriate for numerous high-power switching duties, together with motor management and different energy administration purposes. With its sturdy design and environment friendly efficiency, this module serves as a dependable resolution for industrial and business purposes that require exact management of high-power programs.