Toshiba MG200Q2YS50 IGBT Module
Toshiba MG200Q2YS50 IGBT Module
Posted Date: 2023-06-16
The Toshiba MG200Q2YS50 is an IGBT (Insulated Gate Bipolar Transistor) module designed to reinforce the efficiency of high-power switching purposes. Listed here are some key options and specs of the MG200Q2YS50:
- Most collector present: 200A
- Collector-emitter voltage: 1200V
- Full half bridge configuration in a single package deal
- Electrodes are remoted from the case
- Low energy dissipation for improved effectivity
- Categorized as a Generic Transient Recorder, providing help for numerous transient recorders
- Appropriate for DC motor controls, permitting the complete potential of motor management purposes
- Handy set up with built-in diode and flange mounting machine
- Improved operational velocity and reliability with a designed reverse restoration time
The MG200Q2YS50 is particularly designed for high-power switching and motor management purposes. It supplies a dependable and environment friendly resolution with its excessive present and voltage scores. T
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