Toshiba MG25Q6ES42 IGBT Module

The Toshiba MG25Q6ES42 is an IGBT (Insulated Gate Bipolar Transistor) module produced by Toshiba Company. Listed here are some particulars about this explicit module:

1. Energy Ranking: The MG25Q6ES42 is a high-power module designed for functions requiring larger voltage and present dealing with capabilities. It's rated for a most collector present (IC) of 25A.
2. voltage Ranking: This IGBT module is designed to deal with excessive voltages and has a most collector-emitter voltage (VCE) score of 600V.
3. Bundle Kind: The MG25Q6ES42 module is obtainable in an influence module package deal. The particular package deal kind is a “mini flat package deal,” which is compact and facilitates environment friendly warmth dissipation.
4. Switching Pace: This module presents quick switching traits, enabling it to deal with functions that require fast switching speeds.
5. Safety Options: The MG25Q6ES42 incorporates numerous safety options to boost reliability and safeguard towards electrical faults. These protections could embody overcurrent safety, overvoltage safety, and thermal safety.
6. Purposes: IGBT modules just like the MG25Q6ES42 are generally utilized in energy digital programs and motor management functions, resembling variable pace drives, inverters, industrial automation, and renewable vitality programs.