Vishay VS-P102W IGBT Module
Vishay VS-P102W IGBT Module
The VS-P102W collection is a group of built-in energy circuits that includes energy thyristors and energy diodes packaged collectively. These circuits are designed for varied purposes reminiscent of energy provides, management circuits, and battery chargers. With a glass passivated junction, the collection ensures larger reliability and longevity.
- Glass Passivated Junction: The built-in energy circuits are outfitted with a glass passivated junction, enhancing their reliability and robustness.
- Electrically Remoted Base Plate: The bottom plate is electrically remoted, providing further security and safety.
- Large voltage Vary: The VS-P102W collection is on the market in voltage scores as much as 1200 VRRM/VDRM, offering flexibility for various energy necessities.
- Excessive Dynamic Traits: These built-in energy circuits exhibit excessive dynamic traits, enabling environment friendly energy switching and management.
- Versatile circuit Configurations: A large alternative of circuit configurations is on the market, permitting for personalization primarily based on particular utility wants.
- Simplified Mechanical Design and Meeting: The isolating base plate simplifies mechanical design and meeting processes, leading to price discount and house financial savings.
The VS-P102W collection combines energy thyristors and energy diodes in a single bundle. This integration affords benefits when it comes to price discount and compact measurement. The isolating base plate additional streamlines the mechanical design and meeting, offering further advantages when it comes to price financial savings and effectivity. These options make the VS-P102W collection an appropriate alternative for varied power-related purposes, together with energy provides, management circuits, and battery chargers.
Most Scores and Traits:
- Collector-Emitter Voltage (VCES): 1200 V at Tvj = 25°C
- Steady DC Collector Present (IC): 357 A at TC = 100°C, Tvj max = 175°C
- Repetitive Peak Collector Present (ICRM): 637 A for tP = 1 ms
- Whole Energy Dissipation (Ptot): 1600 W at TC = 25°C, Tvj max = 175°C
- Gate-Emitter Peak Voltage (VGES): ±20V
- Temperature below Switching Situations (Tvj op): -40~150°C
- RMS Isolation Voltage (VISO): 2500V
- Mounting: M5 screw torque of 4.0 N·m
- Weight: 58g
The VS-P102W built-in energy circuit affords reliability, versatility, and effectivity in your energy system wants. Its mixture of energy thyristors and energy diodes, together with its simplified mechanical design, ensures optimum efficiency and cost-effectiveness. Select the VS-P102W collection in your energy circuit necessities and expertise dependable energy management and power administration.
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