WIN Semiconductors Releases Subsequent Technology mmWave Enhancement/Depletion GaAs Expertise

Tao Yuan, Taiwan – June 13, 2023: WIN Semiconductors Corp (TPEx:3105), the world’s largest pure-play compound semiconductor foundry, pronounces the business launch of its subsequent era built-in mmWave GaAs platform, PQG3-0C. Concentrating on mmWave entrance ends, the PQG3-0C expertise combines individually optimized E-mode low noise and D-mode energy pHEMTs to allow best-in-class PA and LNA efficiency on the identical chip. The E-mode/D-mode pHEMTs have ƒ_t of 110GHz and 90GHz respectively, and each make use of 0.15µm T-shaped gates fabricated by deep ultraviolet stepper expertise. Deep UV photolithography is a confirmed, excessive quantity manufacturing method for brief gate size gadgets and eliminates the throughput constraints of conventional electron-beam patterning. Providing two application-specific mmWave transistors with RF switches and ESD safety diodes, PQG3-0C helps a variety of front-end capabilities with elevated on-chip performance.

Each E-mode and D-mode transistors can be utilized for mmWave amplification and function at 4V. The D-mode pHEMT targets energy amplifiers and supplies over 0.6 watt/mm with 11dB linear acquire and near 50% energy added effectivity when measured at 29GHz. The E-mode pHEMT operates finest as a single provide LNA and delivers minimal noise determine beneath 0.7dB at 30GHz with 8dB related acquire, and third order output intercept (OIP3) of 26dBm.

The PQG3-0C platform is manufactured on 150mm GaAs substrates and supplies two interconnect metallic layers with low-k dielectric crossovers, PN-junction diodes for compact ESD safety circuits, and RF change transistors. With a ultimate chip thickness of 100µm, a bottom floor airplane with through-wafer-vias (TWV) are commonplace and might be configured as through-chip RF transitions to eradicate the hostile affect of bond wires at millimeter wave frequencies. PQG3-0C additionally helps flip-chip packaging and might be delivered with Cu-pillar bumps fabricated in WIN’s inner bumping line.

Contact a WIN Semiconductors regional gross sales supervisor for details about pattern kits and foundry entry.

WIN Semiconductors Corp. on the 2023 Worldwide Microwave Symposium, sales space # 235

WIN Semiconductors Corp. shall be showcasing its compound semiconductor RF and mm-Wave options in sales space #235 on the 2023 Worldwide Microwave Symposium being held on the San Diego Conference Heart, June eleventh via June sixteenth.

For extra info, go to WIN Semiconductors Corp. at https://www.winfoundry.com/en-US/

About WIN Semiconductors Corp

WIN Semiconductors Corp. is the main world supplier of pure-play GaAs and GaN wafer foundry providers for the wi-fi, infrastructure, and networking markets. WIN supplies its foundry companions a various portfolio of Hetero-junction Bipolar Transistor and Pseudomorphic Excessive Electron Mobility Transistor, Gallium Nitride Excessive Electron Mobility Transistor, PIN Diode and Optical System expertise options that help vanguard merchandise for functions from 50 MHz to 170 GHz and thru light-wave. Customized merchandise constructed by WIN Semiconductors Corp. are present in an unlimited array of markets, together with smartphone, cell infrastructure, 3-D sensing, optical communications, CATV, aerospace, protection, satellite tv for pc, and automotive functions.

For over 20 years, WIN has offered foundry providers from its state-of-the-art, ISO9001/14001 licensed 150mm GaAs facility headquartered in Taoyuan Metropolis, Taiwan. This multi-site manufacturing facility has roughly 3000 staff and supplies WIN clients with a various array of system expertise platforms and value-added providers, together with DC/RF product testing, Cu wafer bumping and superior package deal options for accelerated product improvement.